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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Low collector saturation voltage APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3795 2SC3795A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICM IB INC Collector-emitter voltage E SEM ANG H 2SC3795 2SC3795A Open emitter OND IC CONDITIONS TOR UC VALUE 800 900 500 8 5 10 3 UNIT V Open base Open collector V V A A A Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25ae 40 W 2 150 -55~150 ae ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency 2SC3795 2SC3795A CONDITIONS IC=0.2A , L=25mH IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 SYMBOL VCEO(SUS) VCEsat VBEsat 2SC3795 2SC3795A MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO 0.1 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 8 0.1 mA IEBO hFE-1 hFE-2 fT mA MHz Switching times ton ts Fall time Turn-on time 2SC3795 Storage time tf INC E SEM ANG H 2SC3795A 2SC3795 2SC3795A IC=3A; IB1=- IB2=0.6A VCC=200V OND IC TOR UC 1.0 |I 1.2 3.0 1.0 |I 1.2 |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3795 2SC3795A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A CHA IN E SEM NG OND IC TOR UC 4 |
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